Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 15, 1969Physical Review

Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium Phosphide

View Full Paper
Ask AI
Bookmark
Share

Authors

PDP. J. DeanLinköping UniversityJCJ. D. CuthbertAT&T (United States)RLR. T. LynchAT&T (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Dean et al. (1969) studied this question.

synapsesocial.com/papers/6a706ada22b3175134db50a5https://doi.org/10.1103/physrev.179.754
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optical Properties of the Group IV Elements Carbon and Silicon in Gallium Phosphide1968 · 151 citations
  2. 2Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe1967 · 242 citations
  3. 3Concentration Quenching of Luminescence by Donors or Acceptors in Gallium Phosphide and the Impurity-Band Auger Model1968 · 72 citations
  4. 4Isoelectronic Traps Due to Nitrogen in Gallium Phosphide1965 · 314 citations
  5. 5Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide1967 · 207 citations