A procedure is described for producing large solid multicrystalline ingots of gallium phosphide. Bars cut from these ingots are being employed in the investigation of the floating zone technique for growing single crystals under controlled conditions. Methods are described for producing stable melted zones in gallium phosphide bars which demonstrate the feasibility of growing large single crystals. Gallium phosphide crystallites are described which grow from the vapor on the bar surfaces above the melted zone during the floating zone processing. These are shown by x‐ray analysis to be continuous with and oriented with respect to the underlying bar crystals.
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Frosch et al. (1961) studied this question.