The Properties of the Low‐Temperature Internal Friction Peak in Silicon

The properties of the low‐temperature internal friction peak are studied in n‐silicon single crystals at a frequency of 100 Hz at a temperature of approximately 110 °K. It is shown that annealing at high temperatures suppresses the peak. Maximum increases after plastic deformation. After γ‐irradiation the peak height is found to decrease with dose by an exponential law. These features suggest that the peak is of the Bordoni‐type. Similar internal friction maxima are also observed in n‐type germanium and p‐type silicon single crystals.