Point Defect Production During Jump Deformation of Zinc

When zinc single crystals yield discontinuously the strain jumps are accompanied by proportionately large transient rises in electrical resistivity. A study of the larger jumps which correspond to slip displacements of ≃ 20μm and resistance increases of ≃ 0.1 μΩ shows that the defect responsible for the resistive transients decays with activation energy 0.32 ± 0.03 eV to traps about 0.1 μm apart. These figures are consistent with the defects being divacancies moving to dislocations within a slip band. The point defect concentration in the slipped regions exceeds 0.1%.