The variation of current with voltage at an idealized contact between two crystals of a semiconductor is calculated on the assumption that electrons penetrate the surface barrier by tunnel effect. Comparison with experimental curves for silicon carbide powders leads to the conclusion that these crystals are covered by an insulating surface film. The existence of such a film affects the rectifying properties of the crystal when it is in contact with a metal. It is shown that this can account for the discrepancies observed between experimental curves and those deduced from the simple Schottky theory of rectification.
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C C Dilworth (1948) studied this question.
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