Fabrication of silicide structures by silicidedirect-write electron-beam lithography process(SiDWEL) on thin silicon nitride membranes and on tantalum substrates

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To achieve optimal resolution for microelectronic devices and nanostructures fabrication, a study has been carried out into the use of the silicide direct-write electron-beam lithography process (SiDWEL) for silicon nitride membranes and thick tantalum layers. Results demonstrate that the threshold doses and resolution of the SiDWEL lithography technique are substrate-independent.