The kinetics of the rise and decay of electroluminescence in an efficient silicon light-emitting diode that is formed by diffusion and features a high thermal stability of spectral parameters of electroluminescence in the region of band-to-band transitions is studied for various injection currents. The parameters of the electroluminescence kinetics are compared with effective lifetimes of minority charge carriers and characteristics of the current kinetics. It is found that the onset of a sharp rise in the electroluminescence intensity is delayed with respect to the instant when the voltage is applied to the diode; the results of measuring the emission distribution over the diode area are reported.
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Emel’yanov et al. (2004) studied this question.
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