Multifunctional and flexible conjugated polymer memristors with an asymmetric electrode structure

Memristors have shown promising prospects in information storage, high-performance computing, and artificial intelligence. Conjugated polymer semiconductor materials have natural malleability, biocompatibility, low-temperature processing, low cost, and molecular modifiability, which are more conducive to the manufacture and application of memristors. In this work, by improving the device structure of traditional conjugated polymer thin-film transistors with a dielectric electret PS layer. Conjugated polymer (IDT-BT, DPPT-TT, or N2200) memristors based on Qthe asymmetric electrode structure are realized. The principle of charge storage and release of the dielectric electret and conjugated polymer semiconductor channel layer is proved. Finally, a new type of memristor was used to simulate the synaptic behavior of neurons. Using the mica sheet as the flexible substrate of the memristor, a bendable conjugated polymer film memristor with a curvature of 143 m −1 was realized.