Low‐Voltage All‐Polymer Field‐Effect Transistor Fabricated Using an Inkjet Printing Technique

Summary: An all‐polymer field‐effect transistor (FET) fabricated using an inkjet printing technique is presented in this paper. Poly(3,4‐ethylenedioxythiophene) works as the source/drain/gate electrode material because of its good conductivity. Polypyrrole acts as the semiconducting layer. Poly(vinyl pyrrolidone) K60, an insulating polymer with a dielectric constant of 60, operates as the dielectric layer. All the polymers are diluted with deionized water, and can be printed with a piezoelectric inkjet printing system. The device functions at a depletion mode with low operation voltage. It has a field‐effect mobility of 0.1 cm 2 · V −1 · s −1 , an on/off ratio of 2.9 × 10 3 , and a subthreshold slope of 2.81 V · decade −1 . Schematic of the all‐polymer FET synthesized here. image Schematic of the all‐polymer FET synthesized here.