Operation of a double heterojunction GaAs/AlGaAs injection laser with a p-type active layer in a strong magnetic field

Measurements of the energy shift of the laser emission and the threshold current of a double heterojunction GaAs/AlGaAs injection laser with a p-type active layer as a function of the magnetic field up to25 Tand atT = 6K and 40 K are presented. A simple expression is derived for calculation of the maximum of the gain curve, which coincides with the energy of the laser emission as a function of the magnetic field and the electronic scattering time. From the experimentally observed shift of the laser emission and the calculated maximum of the gain curve as a function of the magnetic field values for the carrier density at threshold, and for the electronic scattering time in the active layer at both temperatures have been obtained.