Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers

We report the determination of the Auger recombination coefficient in strained and unstrained InGaAs/InGaAsP/InP separate-confinement multiple quantum-well laser structures. For a temperature of 300 K and a well width of 100 Å, we find an Auger coefficient of C=1.0×10−28 cm6 s−1, independent of strain and only weakly dependent on temperature. These properties of the Auger coefficient indicate the dominance of phonon-assisted Auger recombination. Our model calculations based on a six-band kp theory explain the experimentally found dependency on temperature and strain. The consequences on laser performance are discussed.