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December 1, 1965Canadian Journal of Physics

THE SPECTRUM OF SiH AND SiD

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Authors

RVR. D. VermaUniversity of New Brunswick

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Implication

Spectroscopic analysis identifies new electronic absorption systems in SiH and SiD, establishing rotational constants and dissociation energy limits.

Key Points

  • To observe and characterize new electronic absorption band systems in SiH and SiD radicals and determine their rotational and dissociation properties.
  • Recorded ultraviolet absorption spectra of SiH and SiD radicals in the regions near 3,250 Å and 2,050 Å.
  • Conducted rotational structure analyses across the newly observed band systems.
  • Identified two new electronic states: a ²Σ⁺ state at T₀ = 30,974.69 cm⁻¹ and a ²Δ state at T₀ = 48,603.46 cm⁻¹.
  • Calculated comprehensive rotational constants for all known electronic states of SiD.
  • Determined an upper limit for the dissociation energy of SiH at 24,680 cm⁻¹ based on predissociation.

Cite This Study

R. D. Verma (1965) studied this question.

synapsesocial.com/papers/6a7094e4e71d69abee08b494https://doi.org/10.1139/p65-207
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