Chemical Kinetic Analysis on the Growth Mechanism of Diamondlike Films from a CH₃OH–H₂Mixture

The reaction kinetics describing the CH 3 OH decomposition in CVD conditions are studied by the comparison between the measured and the simulated time-varying gas concentrations. The chemical kinetic calculation for the deposition of the diamondlike film by the conventional tungsten filament method is carried out by making use of a simplified one-dimensional model, and it is shown that CH 3 is the main C -containing radical. The overall sticking probability of CH 3 is roughly estimated as β(CH 3 )=10 -2 for the silicon substrate heated to 1000 K.