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Semiconductor nanowires, 5 to 20 nm in diameter and micrometers in length, appear to be promising candidates for a variety of new technologies, including computing, memory, and sensor applications. Suitable for these applications, silicon (Si) and germanium (Ge) nanowires ranging from 4 to 30 nm in diameter and micrometers in length can be produced in high temperature supercritical fluids by thermally degrading organosilane or organogermane precursors in the presence of organic‐monolayer‐protected gold nanocrystals. Although gas phase vapor–liquid–solid (VLS) methods can be used to produce a variety of different nanowire materials, high temperature supercritical fluids provide wire size control through nanocrystal size selection prior to synthesis, and high product yields due to the high precursor solubility.
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Hanrath et al. (2003) studied this question.
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