High-power coupled-stripe (ten-stripe) AlxGa1−xAs-GaAs quantum well lasers that are fabricated by hydrogenation are described. Continuous (cw) room-temperature thresholds as low as Ith=90 mA and internal quantum efficiency as high as 85% are demonstrated. Continuous 300 K laser operation generating 2×375 mW (0.75 W) at 910 mA (10Ith) or 57% efficiency is described (8-μm-wide stripes on 12 μm centers). Minimal heating effects are observed up to the point of catastrophic failure.
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Jackson et al. (1988) studied this question.
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