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March 23, 1987Applied Physics Letters

Coupled-stripe AlxGa1−xAs-GaAs quantum well lasers defined by vacancy-enhanced impurity-induced layer disordering from (Si2)y(GaAs)1−y barriers

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Authors

LGL. J. GuidoVirginia TechWPW. E. PlanoPhotodigm (United States)GJGordon JacksonLancashire Teaching Hospitals NHS Foundation Trust

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Guido et al. (1987) studied this question.

synapsesocial.com/papers/6a70d8e626a7f98052dd4f68https://doi.org/10.1063/1.98036
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