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December 15, 1985Journal of Applied Physics

Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers

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Authors

DDD.G. DeppeUniversity of Central FloridaKHK. C. HsiehNational Tsing Hua UniversityNHN. HolonyakGeneral Electric (United States)

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Deppe et al. (1985) studied this question.

synapsesocial.com/papers/6a70d8e626a7f98052dd4f74https://doi.org/10.1063/1.336265
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  1. 1Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering1984 · 42 citations
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