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April 1, 1984Applied Physics Letters

Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering

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KMKathleen MeehanCalifornia State University, ChicoJBJudith M. BrownOak Ridge National LaboratoryNHN. HolonyakGeneral Electric (United States)

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Meehan et al. (1984) studied this question.

synapsesocial.com/papers/6a82a2f2fdcaa17bff6d0624https://doi.org/10.1063/1.94883
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Also Consider

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  1. 1Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructures1984 · 11 citations
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  4. 4Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition1982 · 54 citations
  5. 5Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing1983 · 16 citations