The isochronal anneal of phosphorus in neutron transmutation doped silicon has been studied with electron paramagnetic resonance. It was found that the fraction of phosphorus atoms occupying a substitutional lattice site increases almost linearly in the range of anneal temperatures from 250 to 700 °C. Recovery of the Fermi level to the normal n-type position is observed to occur between 500 and 700 °C. It is proposed that phosphorus atoms are constitutent parts of the electron trapping centers, capable of trapping two electrons.
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Ruyven et al. (1979) studied this question.
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