Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes.
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J. Guldberg (1977) studied this question.
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