A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (∼3°) and peak power levels of 1 W have been obtained for 100-μm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
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Katz et al. (1983) studied this question.
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