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A normalized threshold current density Jth/d = 4.0 kA cm−2 μm−1 has been determined for pulsed broad-area room-temperature GaAs1−x′Sbx′/AlyGa1−yAs1−xSb x DH lasers of length 380 μm over a range of active-layer thicknesses d. Thresholds as low as 1.2 kA cm−2 and differential efficiencies up to 35% have been obtained in the wavelength range 0.99–1.06 μm. cw operation of stripe-geometry lasers is also described.
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Nahory et al. (1977) studied this question.
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