The liquid phase epitaxial growth of GaAs1−x−zSbxPz mixed crystals is described. Layers have been continuously graded from a composition with the lattice constant of GaAs to a composition suitable for subsequent growth of a GaAs1−xSbx double-heterostructure laser. The details of the grading are discussed in terms of a phase-diagram calculation.
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Nahory et al. (1977) studied this question.
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