A small amount of P has been added to a Ga−In−As melt for liquid phase epitaxial growth of GaxIn1−xAs on GaAs substrate. By this technique, GaxIn1−xAs layers of low etch−pit density and wide composition range have been grown on GaxIn1−xAsyP1−y continuously graded composition layers.
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Nagai et al. (1975) studied this question.
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