Preparation of Epitaxial Ga[sub x]In[sub 1−x]As

Single‐crystal, epitaxial alloys have been prepared on (100), semi‐insulating substrates, using an open‐tube, vapor phase deposition system. High‐purity elemental gallium, indium, and arsenic were used as source materials. Severe distortion of substrate and deposit was observed when thin substrates (less than ca. 11 mils) were used. This was attributed to the large lattice mismatch between deposit and substrate. The electron Hall mobility showed a pronounced minimum for alloys in the middle of the composition range, in agreement with earlier results.