High peak power from (GaAl)As–GaAs double-heterostructure injection lasers

Double-heterostructure (GaAl)As–GaAs injection lasers have been made with very narrow active regions in the range 0.11–0.14 μm. In addition to giving narrow angular beam widths down to 16°, they show high peak power handling capacity up to 40-W/mm junction width at threshold current densities of less than 1500 A/cm2. The results are consistent with the relatively wide near-field distribution perpendicular to the junction plane, which is deduced from the properties of the heterostructure optical waveguide.