Dependence of Recombination Radiation on Current in GaAs Diodes

The ``band-edge'' radiation in a GaAs diode is calculated to be proportional to the diode current at high forward current, while at low currents it is proportional to the square of the current. The impurity radiation in a GaAs diode is shown to vary at high current at a rate smaller than the square root of the current. For efficient conversion of electrical energy into ``edge'' radiation, diodes should be operated at as high currents as possible compatible with no diode heating.