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Kossel line profiles have been analyzed in order to determine the polarity of III – V compound semiconductor surfaces without other means. In view of the importance of differentiating [110] and [1[unk]0] zones on (001) surfaces especially of optoelectronic materials GaAs, GaP, and InP the results of Kossel experiments have been correlated to etch experiments. The long axes of pits produced by common etchants on the (001) surface align always parallel to the [1[unk]0] direction.
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Nolze et al. (1990) studied this question.
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