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Electrical conductivity measurements were employed to investigate the kinetics of copper precipitation out of supersaturated silicon between 30°C and 70°C. The kinetics were observed to follow a (time) n rate equation where n=0·687 ± 0·043. An activation energy of 1·10 ± 0·05 ev was found for the process. The results are discussed with reference to current theories of precipitation at dislocations. It was concluded that the reaction is not diffusion controlled, and a transient rate limitation theory was employed to describe the results qualitatively.
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Dorward et al. (1968) studied this question.
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