Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

Han Wui Then; Meixin Feng; N. Holonyak

doi:10.1063/1.2805014

October 29, 2007Applied Physics Letters

Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation H. W. Then, M. Feng, N. Holonyak; Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Appl. Phys. Lett. 29 October 2007; 91 (18): 183505. https://doi.org/10.1063/1.2805014 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

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Then et al. (2007) studied this question.

synapsesocial.com/papers/6a70aaa031a3df824328eb9a https://doi.org/10.1063/1.2805014

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Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

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Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

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