Pseudomorphic InP∕InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6μm2 HBT achieves excellent ƒT values of 604GHz (associated ƒMAX=246GHz) at a collector current density of 16.8mA∕μm2, with a dc gain of 65 and a breakdown voltage of BVCEO=1.7V.
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Hafez et al. (2005) studied this question.
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