Answers are grounded in this paper and cite their sources.
Time-of-flight SIMS profiles have been obtained on an SiO2/Si system. A dual ion beam experimental set-up has been used in order to decouple the erosion process due to an Ar+ beam from the analysis done by a Ga+ beam. The Ga+ yield shows a characteristic double-peaked structure at the SiO2/Si interface. It is shown that the peak at shallower depth can be accounted for by a change in sputtering rate, whereas that located at the interface can be interpreted in terms of gallium segregation.
No takes yet. Share an insight, caveat, or question.
Licciardello et al. (2000) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: