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Donor-state absorption and photoconductivity spectra of n-type epitaxial GaAs layers with carrier concentrations in the range 10¹⁴-10¹⁶/cm³ are reported. The essentially effective-mass-like behavior of the impurity spectra is confirmed, and ionization energies of 6.08, 5.81, 5.89, and 6.10±{}0.025 meV are reported for Ge, Si, Se, and S donors. The influence of impurity-banding upon the values of ED is considered. Central-cell corrections to donor ground-state energies are discussed.
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Summers et al. (1970) studied this question.
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