Numerical calculations of the small-signal characteristics of GaAs, InP, and n-type Ge have been carried out essentially by the method of Rees (1969). For GaAs and InP especially the imaginary part, that is the free-carrier contribution to the dielectric constant, is shown to depend strongly on the intervalley coupling strength. For Ge, good agreement with experiments is found at room temperature. At 77K the agreement is only semiquantitative.
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B. Vinter (1974) studied this question.
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