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We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
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Charbonneau et al. (1993) studied this question.
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