High-speed, low-dark-current, front-side-illuminated InGaAs PIN photodiodes with a self-passivated-mesa structure have been fabricated on semi-insulating InP substrates. These detectors have a nearly flat frequency response beyond 22GHz. Their quantum efficiency is 65% without AR coating and the dark current is about 5nA at –10V.
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Fan et al. (1987) studied this question.
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