A surface-illuminated InP/GaInAs p-i-n photodiode with a planar, embedded structure has been fabricated. By minimizing the stray capacitance and by using semi-insulating substrates, the capacitance has been reduced to 0.08 pF for a diode with a diameter of 20 μm. It has been demonstrated that this photodiode has a very high-speed response of greater than 10 GHz. The present structure is suitable not only as a discrete p-i-n photodiode but also for optoelectronic integration.
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Miura et al. (1986) studied this question.
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