Experimental study reveals radiation-induced trap-assisted tunneling drives gate leakage in gallium nitride transistors, highlighting interface defect mechanisms under low dose exposure.
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance (Gₚ/ω)analyses and TCAD simulations, it has been demonstrated that the negative shifts in bothId-VgsandVₜₕare primarily due to the formation of donor-like traps near the p-GaN/AlGaN interface, which is a result of the dehydrogenation of pre-existing defects during low dose rate irradiation. Additionally, the results of the TCAD simulations, indicate that the trap-assisted tunneling (TAT) process, which involves the recombination of trap-assisted holes with electrons in the p-GaN layer, may dominate the physical mechanisms responsible for the increase in gate leakage current (Ig-Vgs). These results may provide a basis for understanding the role of radiation-induced traps on electrical parameters degradations for p-GaN gate HEMTs.
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Li et al. (2024) studied this question.
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