MOVPE GaN Grown on Alternative Substrates

The structure, morphology and optical properties of GaN films deposited by metalorganic vapour phase epitaxy (MOVPE) on alternative substrates: ZnO, NdGaO, YSZ (yttria stabilized zirconia). Scanning electron microscopy, X-ray diffraction and photoluminescence were used for the epitaxial layers characterisation. The obtained results have been compared to those of GaN layers grown on c-plane sapphire substrates. It was established that the most important step towards the realisation of device quality GaN material on alternative substrates is the first stage of the growth process.