Ultraviolet photodetector based on vertical β-Ga₂O₃ nanowire array on GaN substrate

This is the authors' abstract. We don't add key points for this paper.

Driven by the requirement to ultraviolet detection, β -Ga 2 O 3 UV photodetectors have attracted great attention. Using a metal organic chemical vapor deposition (MOCVD) reactor, we grew β -Ga 2 O 3 nanowires array on a GaN substrate using Ga as catalyst. The density of the nanowires was optimized employing the substrate patterning technology. A UV detector based on the graphene/ β -Ga 2 O 3 -nanowire-array was realized by micro-fabrication techniques. The device has a wide range of UV response covering UVC-UVA band and the peak response reaches 30.82 mA W −1 at 258 nm corresponding to the band gap of β -Ga 2 O 3 . The rapid response speed (<1 s) is comparable to that of most reported Ga 2 O 3 nanowire ultraviolet photodetectors.