Demonstration of high-responsivity epitaxial β-Ga₂O₃/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

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We demonstrate epitaxial beta-Ga2O3/GaN-based vertical metal-heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7A/W) at 256 and 365 nm, UV-to-visible rejection > 10(3), and a photo-to-dark current ratio of similar to 100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown beta-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.