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The effect of surface states on the temperature variation of the work function of semiconductors is considered in this paper. In the first part the variation of the electrochemical potential is given on the basis of an equation due to Fowler. An attempt is made to show at what temperature a semiconductor becomes intrinsic. In the last part the temperature variation of the work function is considered for various densities of surface states and numbers of donator (or acceptor) levels. To carry this calculation through a new expression, which is temperature dependent, is suggested for the number of electrons in the surface states. By using appropriate values obtained from experiment one is able to explain A. H. Smith's results.
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Markham et al. (1949) studied this question.
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