We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN∕GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the GaN channels were depleted. We also observed higher-frequency signals due to SAWs in transducers with positively-biased control gates. These results suggest that SAW-based functional devices are achievable by employing transducers in which rf signals for exciting SAWs and control signals for modulating SAW properties are applied to different terminals.
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Shigekawa et al. (2006) studied this question.
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