Characterization of fundamental parameters of a semiconductor laser with an injected optical probe

A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier and photon lifetimes. It consists of a single experimental setup and is broadly applicable to semiconductor lasers of different wavelengths and different dynamic bandwidths.>