Optically generated carriers are used to modulate below-gap absorption in GaAs doping superlattices. Room-temperature modulation is observed when the potential wells are deep (≳1 eV). Spatial separation of the electrons and holes leads to slow recovery of the absorption following generation of the carriers. The amplitude of the absorption modulation shows only a weak dependence on the excitation intensity.
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Simpson et al. (1986) studied this question.
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