Impurity-induced layer-disordered buried heterostructure AlxGa1−xAs-GaAs quantum well edge-injection laser array

A laser array is described that makes use of edge injection into two sides (two ‘‘edges’’) of a stack of three AlxGa1−xAs-GaAs multiple quantum well active regions. The edge-injection array is realized by impurity-induced layer disordering, which forms a higher gap Si-doped n-type emitter that edge injects electrons into either side of a stack of three lower gap multiple quantum well p-type active regions. The far-field beam divergence in the vertical direction (θ⊥) of the array diode is reduced from 45° to 15° as determined by the laser operation, for comparison, of one of the quantum well active regions (oxide-defined stripe geometry diode).