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May 1, 1991IEEE Photonics Technology Letters

Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

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Authors

RWR. G. WatersJames S. McDonnell FoundationRDR. J. DalbyJames S. McDonnell FoundationJBJohn A. BaumannFerdinand-Braun-Institut

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Waters et al. (1991) studied this question.

synapsesocial.com/papers/6a70d94fa528af2d65c3c715https://doi.org/10.1109/68.93861
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers1990 · 115 citations
  2. 2AlInGaAs-AlGaAs strained single-quantum-well diode lasers1991 · 26 citations
  3. 3Degradation of III–V Opto‐Electronic Devices1988 · 120 citations
  4. 4Dislocation pinning in GaAs by the deliberate introduction of impurities1975 · 60 citations
  5. 5Continuous operation of high-power (200 mW) strained-layer Ga 1−x In x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm1988 · 45 citations