InP/InGaAs Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection

An InP/InGaAs heterobarrier rectifier called a Fermi-level managed barrier (FMB) diode was developed for attaining broadband and low-noise terahertz (THz) wave detection. The barrier height was controlled by doping in an InGaAs layer, achieving a very small barrier-height of 70 meV. The intrinsic zero-biased differential resistance obtained was 110 Ω for an FMB diode with a 0.4 µm 2 junction area. The fabricated device assembled in a quasi-optical module detected THz-wave signals at frequencies from 200 GHz to 1 THz at room temperature. The peak current and voltage sensitivities were respectively 3.7 A/W and 1110 V/W at 300 GHz for a zero-biased condition. An FMB diode module with an integrated preamplifier was also developed for characterizing its performance in practical use. Signal detection at frequencies from 160 GHz to 1.4 THz was attained with a high sensitivity of 3.2 MV/W and a low noise-equivalent power of 3.0 pW/ at 300 GHz.