Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure

InP crystals were grown by the horizontal Bridgman method under controlled ambient phosphorus vapor pressure. The lattice parameter was measured by X-ray diffraction analysis. The lattice parameter of the InP crystals increased with increasing phosphorus vapor pressure. The relationship between the lattice parameter and composition indicates that the In-rich composition is attributed to the P-vacancies. This corresponds to the photoluminescence spectra of P-vacancy-related emission.