Heterojunction solar cells of the type Si-CdS have been fabricated which have efficiencies of 7% under AM1 conditions. The cells have been fabricated by depositing epitaxial CdS films on thermally cleaned silicon substrates under UHV. The efficiency of these cells has been studied over a wide range of Si resistivities and it has been found that the highest efficiency is obtained with near-intrinsic silicon. The series resistance associated with these cells results in a fill factor of 0.6.
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Livingstone et al. (1977) studied this question.
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